• DocumentCode
    3520396
  • Title

    Rapid thermal processing activity in teaching and research in the State University of New York at New Paltz

  • Author

    Eftekhari, G.

  • Author_Institution
    Dept. of Electr. Eng., State Univ. of New York, New Paltz, NY, USA
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    43
  • Lastpage
    48
  • Abstract
    The applications of rapid thermal processing in Teaching and Research at the State University of New York at New Paltz are explained. It is used by students in the microelectronic laboratory for oxidation, making ohmic contacts and annealing. In research it is used for oxidation, oxynitridation, study of thermal stability of metal-semiconductor contacts, metal-insulator-semiconductor tunnel diodes, and metal-oxide-semiconductor structures
  • Keywords
    electronic engineering education; ohmic contacts; oxidation; rapid thermal processing; teaching; thermal stability; State University of New York; annealing; metal-insulator-semiconductor tunnel diodes; metal-oxide-semiconductor structures; metal-semiconductor contacts; microelectronic laboratory; ohmic contacts; oxidation; oxynitridation; rapid thermal processing activity; teaching; thermal stability; Diodes; Education; Laboratories; Metal-insulator structures; Microelectronics; Ohmic contacts; Oxidation; Rapid thermal annealing; Rapid thermal processing; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616679
  • Filename
    616679