DocumentCode :
3520396
Title :
Rapid thermal processing activity in teaching and research in the State University of New York at New Paltz
Author :
Eftekhari, G.
Author_Institution :
Dept. of Electr. Eng., State Univ. of New York, New Paltz, NY, USA
fYear :
1997
fDate :
20-23 Jul 1997
Firstpage :
43
Lastpage :
48
Abstract :
The applications of rapid thermal processing in Teaching and Research at the State University of New York at New Paltz are explained. It is used by students in the microelectronic laboratory for oxidation, making ohmic contacts and annealing. In research it is used for oxidation, oxynitridation, study of thermal stability of metal-semiconductor contacts, metal-insulator-semiconductor tunnel diodes, and metal-oxide-semiconductor structures
Keywords :
electronic engineering education; ohmic contacts; oxidation; rapid thermal processing; teaching; thermal stability; State University of New York; annealing; metal-insulator-semiconductor tunnel diodes; metal-oxide-semiconductor structures; metal-semiconductor contacts; microelectronic laboratory; ohmic contacts; oxidation; oxynitridation; rapid thermal processing activity; teaching; thermal stability; Diodes; Education; Laboratories; Metal-insulator structures; Microelectronics; Ohmic contacts; Oxidation; Rapid thermal annealing; Rapid thermal processing; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
ISSN :
0749-6877
Print_ISBN :
0-7803-3790-5
Type :
conf
DOI :
10.1109/UGIM.1997.616679
Filename :
616679
Link To Document :
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