DocumentCode
3520396
Title
Rapid thermal processing activity in teaching and research in the State University of New York at New Paltz
Author
Eftekhari, G.
Author_Institution
Dept. of Electr. Eng., State Univ. of New York, New Paltz, NY, USA
fYear
1997
fDate
20-23 Jul 1997
Firstpage
43
Lastpage
48
Abstract
The applications of rapid thermal processing in Teaching and Research at the State University of New York at New Paltz are explained. It is used by students in the microelectronic laboratory for oxidation, making ohmic contacts and annealing. In research it is used for oxidation, oxynitridation, study of thermal stability of metal-semiconductor contacts, metal-insulator-semiconductor tunnel diodes, and metal-oxide-semiconductor structures
Keywords
electronic engineering education; ohmic contacts; oxidation; rapid thermal processing; teaching; thermal stability; State University of New York; annealing; metal-insulator-semiconductor tunnel diodes; metal-oxide-semiconductor structures; metal-semiconductor contacts; microelectronic laboratory; ohmic contacts; oxidation; oxynitridation; rapid thermal processing activity; teaching; thermal stability; Diodes; Education; Laboratories; Metal-insulator structures; Microelectronics; Ohmic contacts; Oxidation; Rapid thermal annealing; Rapid thermal processing; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location
Rochester, NY
ISSN
0749-6877
Print_ISBN
0-7803-3790-5
Type
conf
DOI
10.1109/UGIM.1997.616679
Filename
616679
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