Title :
A mobility model correction for ‘atomistic’ drift-diffusion simulation
Author :
Amoroso, S.M. ; Alexander, C.L. ; Markov, S. ; Roy, G. ; Asenov, A.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Abstract :
A comprehensive statistical investigation of the increase in resistance associated with charge trapping in `atomistic´ simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the `atomistic´ simulations is proposed to suppress the error related to the fictitious charge trapping.
Keywords :
doping profiles; electrical resistivity; elemental semiconductors; resistors; silicon; statistical analysis; Si; atomistic drift-diffusion simulation; charge trapping; doping densities; mesh spacing; mobility model correction; statistical analysis; Charge carrier processes; Doping; Electric potential; Resistance; Resistors; Semiconductor process modeling; Solid modeling; Atomistic Simulation; Density Gradient; Mobility Model;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035023
