Title :
Calibrating 2D potential models for fully depleted SOI MOSFET´s
Author_Institution :
Center for Math. in Ind., Michigan Technol. Univ., Houghton, MI, USA
Abstract :
We examine three basic approximations from which the existing quasi-2D models for fully depleted SOI MOSFET´s are derived. Based on our analysis, we propose corresponding strategies to calibrate these models
Keywords :
MOS integrated circuits; MOSFET; ULSI; semiconductor device models; semiconductor thin films; silicon-on-insulator; 2D potential models; ULSI; calibration; fully depleted SOI MOSFET; quasi-2D models; Boundary conditions; Charge carrier processes; Circuit simulation; Electric potential; MOSFET circuits; Poisson equations; Semiconductor films; Silicon; Substrates; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616692
