• DocumentCode
    3520619
  • Title

    Fine pitch copper wire bonding — Why now?

  • Author

    Appelt, Bernd K. ; Tseng, Andy ; Lai, Yi-Shao

  • Author_Institution
    Adv. Semicond. Eng., Santa Clara, CA, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    Fine pitch Cu wire bonding is at the cusp of becoming main stream. Many challenges had to be overcome when making the transition from fine pitch Au wire bonding to fine pitch Cu wire bonding in a high volume manufacturing environment. The challenges for Cu wire bonding arise from the inherent properties of Cu: propensity to oxidize, increased hardness, slow intermetallic growth whilst dice are (still) designed for packaging with Au wire bonding i.e. pad metal stack and thickness.
  • Keywords
    copper; electronics packaging; fine-pitch technology; hardness; lead bonding; Cu; fine pitch copper wire bonding; hardness; high volume manufacturing environment; packaging; pad metal stack; pad metal thickness; slow intermetallic growth; Bonding; Copper; Costs; Electronics packaging; Gold; Intermetallic; Manufacturing; Oxidation; Reliability engineering; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416500
  • Filename
    5416500