DocumentCode
3520619
Title
Fine pitch copper wire bonding — Why now?
Author
Appelt, Bernd K. ; Tseng, Andy ; Lai, Yi-Shao
Author_Institution
Adv. Semicond. Eng., Santa Clara, CA, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
469
Lastpage
472
Abstract
Fine pitch Cu wire bonding is at the cusp of becoming main stream. Many challenges had to be overcome when making the transition from fine pitch Au wire bonding to fine pitch Cu wire bonding in a high volume manufacturing environment. The challenges for Cu wire bonding arise from the inherent properties of Cu: propensity to oxidize, increased hardness, slow intermetallic growth whilst dice are (still) designed for packaging with Au wire bonding i.e. pad metal stack and thickness.
Keywords
copper; electronics packaging; fine-pitch technology; hardness; lead bonding; Cu; fine pitch copper wire bonding; hardness; high volume manufacturing environment; packaging; pad metal stack; pad metal thickness; slow intermetallic growth; Bonding; Copper; Costs; Electronics packaging; Gold; Intermetallic; Manufacturing; Oxidation; Reliability engineering; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location
Singapore
Print_ISBN
978-1-4244-5099-2
Electronic_ISBN
978-1-4244-5100-5
Type
conf
DOI
10.1109/EPTC.2009.5416500
Filename
5416500
Link To Document