Title :
TCAD challenges and some Fraunhofer solutions
Author_Institution :
Fraunhofer Inst. for Integrated Syst. & Device Technol. IISB, Erlangen, Germany
Abstract :
In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS. After a short outline of these challenges, related results obtained at Fraunhofer for the simulation of lithography and other topography steps, dopant diffusion/activation, device architectures and impact of process variations are summarized.
Keywords :
lithography; technology CAD (electronics); Fraunhofer solutions; TCAD; lithography; semiconductor device architectures; semiconductor technology; Etching; Integrated circuit modeling; Lithography; Materials; Semiconductor device modeling; Semiconductor process modeling; Transistors; ITRS; device architectures; dopant diffusion and activation; lithography; process variations and windows; topography;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035028
