Title :
Statistical design for manufacturing software for low power radiation hardened SOI MOSFETs
Author :
Phelps, Mark J. ; Hess, Glenn T. ; Sanders, Thomas J.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
This paper presents a new software tool called STADIUM-SOI which is employed by device engineers to statistically simulate silicon-on-insulator technologies. Using this software, it has been demonstrated that statistical simulation is an efficient way to investigate the effect of manufacturing variation on device yield for SOI processing
Keywords :
MOSFET; design for manufacture; digital simulation; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; software tools; statistical analysis; SOI processing; STADIUM-SOI; Si; design for manufacturing software; device yield; manufacturing variation; radiation hardened SOI MOSFETs; software tool; statistical design for manufacturing; statistical simulation; Computational modeling; Computer simulation; Design engineering; Integrated circuit yield; MOSFETs; Manufacturing processes; Radiation hardening; Silicon on insulator technology; Software design; Statistics;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616694
