• DocumentCode
    3520680
  • Title

    A wavelet method to solve high-dimensional transport equations in semiconductor devices

  • Author

    Peikert, Vincent ; Schenk, Andreas

  • Author_Institution
    Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    This paper reports the first numerical solver for the Boltzmann transport equation (BTE) that uses wavelets as basis functions. The main advantage of wavelets is that they offer modern compression and adaptation techniques that could cope with the “curse of dimensionality” of the 6-dimensional phase space. An adequate numerical method for the BTE has been developed which combines a conservative discontinuous Galerkin (DG) formulation with a Multi-Wavelets (MW) basis. NIN device simulations in a 3-dimensional phase space prove that the DG formulation performs well together with MWs. On the other hand, it shows that MWs provide a very efficient basis for the BTE. The number of degrees of freedom can be compressed to about 1-10% in comparison to other modern solvers. Even greater advantages are expected for higher-dimensional phase spaces.
  • Keywords
    Boltzmann equation; Galerkin method; semiconductor device models; wavelet transforms; Boltzmann transport equation; adaptation techniques; compression techniques; conservative discontinuous Galerkin method; high-dimensional transport equations; semiconductor devices; three-dimensional phase space; wavelet method; Adaptation models; Mathematical model; Moment methods; Numerical models; Polynomials; Wavelet transforms;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6035029
  • Filename
    6035029