DocumentCode
3520680
Title
A wavelet method to solve high-dimensional transport equations in semiconductor devices
Author
Peikert, Vincent ; Schenk, Andreas
Author_Institution
Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
299
Lastpage
302
Abstract
This paper reports the first numerical solver for the Boltzmann transport equation (BTE) that uses wavelets as basis functions. The main advantage of wavelets is that they offer modern compression and adaptation techniques that could cope with the “curse of dimensionality” of the 6-dimensional phase space. An adequate numerical method for the BTE has been developed which combines a conservative discontinuous Galerkin (DG) formulation with a Multi-Wavelets (MW) basis. NIN device simulations in a 3-dimensional phase space prove that the DG formulation performs well together with MWs. On the other hand, it shows that MWs provide a very efficient basis for the BTE. The number of degrees of freedom can be compressed to about 1-10% in comparison to other modern solvers. Even greater advantages are expected for higher-dimensional phase spaces.
Keywords
Boltzmann equation; Galerkin method; semiconductor device models; wavelet transforms; Boltzmann transport equation; adaptation techniques; compression techniques; conservative discontinuous Galerkin method; high-dimensional transport equations; semiconductor devices; three-dimensional phase space; wavelet method; Adaptation models; Mathematical model; Moment methods; Numerical models; Polynomials; Wavelet transforms;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035029
Filename
6035029
Link To Document