DocumentCode :
3520696
Title :
Ultrafast laser direct hard-mask writing for high performance inverted-pyramidal texturing of silicon
Author :
Kumar, K. ; Lee, K.C. ; Nogami, J. ; Herman, P.R. ; Kherani, N.P.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Toronto, Toronto, ON, Canada
fYear :
2012
fDate :
3-8 June 2012
Abstract :
We demonstrate a simple and versatile laser assisted technique to produce an inverted pyramid texture in monocrystalline silicon to reduce surface reflectance. With this method the inverted pyramid size, distribution, spacing, and hence the spectral reflection of the textured surface can be tailored. The process removes minimal amounts of silicon during the texturing process, thus making it compatible with ultra-thin silicon photovoltaics. Surfaces with the fabricated inverted pyramid texture and an antireflection coating reflect 4% of incident light.
Keywords :
elemental semiconductors; laser beam applications; reflectivity; silicon; solar cells; surface texture; thin film devices; Si; antireflection coating; high performance inverted-pyramidal texturing; incident light; inverted pyramid size; monocrystalline silicon; spectral reflection; surface reflectance reduction; textured surface; texturing process; ultra-thin silicon photovoltaics; ultrafast laser direct hard-mask writing; versatile laser assisted technique; Etching; Optical surface waves; Photovoltaic cells; Reflectivity; Silicon; Surface texture; alkaline etching; crystalline-silicon; laser processing; photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318029
Filename :
6318029
Link To Document :
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