Numerical methods for a quantum energy transport model arising in scaled MOSFETs

Author

Sho, Shohiro ; Odanaka, Shinji

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Osaka Univ., Suita, Japan

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

303

Lastpage

306

Abstract

This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.

Keywords

MOSFET; hot carriers; hydrodynamics; iterative methods; numerical stability; relaxation theory; semiconductor device models; diffusion scaling; four-moment QET model; four-moment quantum energy transport model; iterative solution method; nonlocal hot-carrier effect; numerical convergence; numerical method; numerical stability; quantum confinement transport; quantum hydrodynamic model; relaxation method; scaled MOSFET; space discretization; Hydrodynamics; Iterative methods; MOSFETs; Mathematical model; Numerical models; Potential well; Solid modeling; MOSFET; quantum energy transport model; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6035030

Filename

6035030