Title :
Numerical methods for a quantum energy transport model arising in scaled MOSFETs
Author :
Sho, Shohiro ; Odanaka, Shinji
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Osaka Univ., Suita, Japan
Abstract :
This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.
Keywords :
MOSFET; hot carriers; hydrodynamics; iterative methods; numerical stability; relaxation theory; semiconductor device models; diffusion scaling; four-moment QET model; four-moment quantum energy transport model; iterative solution method; nonlocal hot-carrier effect; numerical convergence; numerical method; numerical stability; quantum confinement transport; quantum hydrodynamic model; relaxation method; scaled MOSFET; space discretization; Hydrodynamics; Iterative methods; MOSFETs; Mathematical model; Numerical models; Potential well; Solid modeling; MOSFET; quantum energy transport model; simulation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035030