DocumentCode
3520714
Title
A Level Set simulator for nanooxidation using non-contact atomic force microscopy
Author
Filipovic, L. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
307
Lastpage
310
Abstract
Atomic force microscopy (AFM) can be used as a lithographic technique capable of manufacturing nanometer-sized devices. A simulator for AFM, implemented in a Level Set environment, is presented. The simulator uses empirical models to deduce the shape of a desired nanodot based on the applied voltage, pulse time, and ambient humidity. The shape of an AFM nanowire depends on the same factors as the shape of the nanodot in addition to the wire´s orientation with respect to the (010) direction. An advantage of the presented approach is the ease with which further processing steps can be simulated in the same environment. Sample oxide nanodots and nanowires are analyzed, showing the ability of the process to generate nanometer sized structures.
Keywords
atomic force microscopy; lithography; nanofabrication; nanowires; oxidation; ambient humidity; empirical models; level set simulator; lithographic technique; nanodots; nanometer-sized device manufacturing; nanooxidation; nanowire orientation; noncontact atomic force microscopy; Atomic force microscopy; Force; Humidity; Nanobioscience; Oxidation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035031
Filename
6035031
Link To Document