Title :
Simulation of a new EEPROM flash memory cell for high density applications
Author :
Sabesan, Loganathan ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
Simulated results of a promising novel structure for a flash EEPROM cell is reported. The study was performed using a 2-D device simulator. The structure is shown to have better performance and robustness with the possibility of fabricating high density modules
Keywords :
EPROM; integrated circuit modelling; integrated memory circuits; 2D device simulation; EEPROM flash memory cell; high density module; Aerospace industry; EPROM; Flash memory cells; Logic; Nonvolatile memory; Poisson equations; Rough surfaces; Scattering; Surface roughness; Threshold voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616697
