• DocumentCode
    3520737
  • Title

    Behaviors of palladium in palladium coated copper wire bonding process

  • Author

    Zhang, Binhai ; Qian, Kaiyou ; Wang, Ted ; Cong, Yuqi ; Zhao, Mike ; Fan, Xiangquan ; Wang, Jiaji

  • Author_Institution
    Dept. of Mater. Sci., Fudan Univ., Shanghai, China
  • fYear
    2009
  • fDate
    10-13 Aug. 2009
  • Firstpage
    662
  • Lastpage
    665
  • Abstract
    Because of its high thermal conductivity, great electrical property and low cost, copper wire is considered to replace the conventional gold wire and becomes widely used in IC assembly processes recent years. However, copper wire bonding also has its limitations. Copper oxidation, its high hardness and yield strength are two main disadvantages that manufacturers concern most. The application of copper wire coated with palladium is a solution to prevent copper oxidation during the bonding process. Nevertheless, Pd coated copper wire brings in new possible influences to bonding interface and its reliability. This paper gave a systematic study on behaviors of palladium in palladium coated copper wire during the bonding process. SEM and EDS were used to analyze Pd distributions in copper wire, FAB (free air ball), bonded ball and its interface. It was shown that Pd distribution changed with bonding process going on and the factors that might cause these changes were discussed.
  • Keywords
    copper; integrated circuit bonding; integrated circuit packaging; lead bonding; palladium; scanning electron microscopy; yield strength; Cu-Pd; EDS; IC assembly process; SEM; copper oxidation; copper wire bonding process; electrical property; free air ball; gold wire; high thermal conductivity; scanning electron microscopy; yield strength; Assembly; Bonding processes; Copper; Costs; Gold; Manufacturing; Oxidation; Palladium; Thermal conductivity; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-4658-2
  • Electronic_ISBN
    978-1-4244-4659-9
  • Type

    conf

  • DOI
    10.1109/ICEPT.2009.5270668
  • Filename
    5270668