Manufacturability of high frequency power MOSFETs

Author

Hess, Glenn T. ; Lee, Sungkwon ; Sanders, Thomas J. ; Tuma, Thomas N.

Author_Institution

AET Inc., Melbourne, FL, USA

fYear

1997

fDate

20-23 Jul 1997

Firstpage

112

Lastpage

117

Abstract

This paper presents the results of an R&D program conducted jointly by a small business and a university which was funded by the US Army. The goal of the program was to design a manufacturable pair of high power MOSFETs which meet stringent military requirements. Three candidate technologies with the potential to be used as a basis for the high power MOSFET technology were identified and investigated. The DMOSFET technology was selected as the most promising technology due to its high degree of manufacturability and reliability. The AET proprietary tool, STADIUM-TCAD, was used to determine the potential manufacturability of the DMOSFET devices. In addition, we have shown that the DMOSFET devices designed in this work have excellent potential as a technology for high power switching applications

Keywords

CAD; UHF field effect transistors; field effect transistor switches; military equipment; power MOSFET; power field effect transistors; semiconductor device reliability; semiconductor technology; AET tool; DMOSFET device; R&D program; STADIUM-TCAD; high frequency power MOSFET; manufacturability; military application; reliability; switching; Broadband amplifiers; Costs; Electronic warfare; FETs; Frequency; MOSFETs; Manufacturing; Research and development; Switches; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Conference_Location

Rochester, NY

ISSN

0749-6877

Print_ISBN

0-7803-3790-5

Type

conf

DOI

10.1109/UGIM.1997.616699

Filename

616699