Title :
Effect of shadowing ion energy flux and neutral flux and isotropic neutral flux on plasma etching profiles
Author :
Wang, Chungdar Daniel ; Abraham-Shrauner, Barbara
Author_Institution :
Dept. of Electr. Eng., Washington Univ., St. Louis, MO, USA
Abstract :
Summary form only given. A model for the simulation of etch rates in ion-assisted and energetic neutral plasma etching on semiconductor wafers is developed. Explicit analytical expressions for evolving two dimensional etched surfaces are solved by the method of characteristics
Keywords :
semiconductor process modelling; sputter etching; etch rate; isotropic neutral flux; method of characteristics; model; plasma etching profile; semiconductor wafer; shadowing ion energy flux; shadowing neutral flux; simulation; two dimensional surface; Acceleration; Differential equations; Etching; Plasma accelerators; Plasma applications; Plasma properties; Plasma sheaths; Plasma simulation; Semiconductor device modeling; Shadow mapping;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616702
