A new IGBT circuit model for SPICE simulation

Author

Strollo, Antonio G M

Author_Institution

Dept. of Electron. Eng., Naples Univ., Italy

Volume

1

fYear

1997

fDate

22-27 Jun 1997

Firstpage

133

Abstract

A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide base bipolar transistor of the IGBT is modeled by using a Laplace-transform solution of the ambipolar diffusion equation. The obtained nonquasi-static BJT model is coupled with a proposed short-channel MOSFET model, to give the overall IGBT behavior. The developed IGBT model is implemented as a subcircuit in the PSPICE simulator, resulting in good accuracy and reduced CPU time

Keywords

Laplace transforms; MOSFET; SPICE; circuit analysis computing; diffusion; insulated gate bipolar transistors; semiconductor device models; IGBT circuit model; Laplace-transform solution; PSPICE simulator; SPICE simulation; ambipolar diffusion equation; nonquasi-static BJT model; reduced CPU time; short-channel MOSFET model; subcircuit; wide base bipolar transistor; Bipolar transistors; Cathodes; Central Processing Unit; Circuit simulation; Current density; Electron emission; Insulated gate bipolar transistors; Laplace equations; Power engineering and energy; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE

Conference_Location

St. Louis, MO

ISSN

0275-9306

Print_ISBN

0-7803-3840-5

Type

conf

DOI

10.1109/PESC.1997.616704

Filename

616704