Title :
A new IGBT circuit model for SPICE simulation
Author :
Strollo, Antonio G M
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
Abstract :
A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide base bipolar transistor of the IGBT is modeled by using a Laplace-transform solution of the ambipolar diffusion equation. The obtained nonquasi-static BJT model is coupled with a proposed short-channel MOSFET model, to give the overall IGBT behavior. The developed IGBT model is implemented as a subcircuit in the PSPICE simulator, resulting in good accuracy and reduced CPU time
Keywords :
Laplace transforms; MOSFET; SPICE; circuit analysis computing; diffusion; insulated gate bipolar transistors; semiconductor device models; IGBT circuit model; Laplace-transform solution; PSPICE simulator; SPICE simulation; ambipolar diffusion equation; nonquasi-static BJT model; reduced CPU time; short-channel MOSFET model; subcircuit; wide base bipolar transistor; Bipolar transistors; Cathodes; Central Processing Unit; Circuit simulation; Current density; Electron emission; Insulated gate bipolar transistors; Laplace equations; Power engineering and energy; SPICE;
Conference_Titel :
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location :
St. Louis, MO
Print_ISBN :
0-7803-3840-5
DOI :
10.1109/PESC.1997.616704
