Title :
A compact model for early electromigration lifetime estimation
Author :
de Orio, R.L. ; Ceric, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
A compact model for early electromigration failures in copper dual-damascene M1/via structures is proposed. The model is derived based on relevant physical effects of the early failure mode, where a rigorous void nucleation model and a simple mechanism for slit void growth are considered. As a result, a simple analytical model for the early electromigration lifetime is obtained. In addition, it is shown that the simulations provide a reasonable estimation for the early lifetimes.
Keywords :
electromigration; nucleation; compact model; electromigration failure; electromigration lifetime estimation; slit void growth; void nucleation model; Copper; Electromigration; Integrated circuit interconnections; Mathematical model; Numerical models; Reliability; Stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035040
