• DocumentCode
    3521047
  • Title

    Electron-phonon scattering in Si and Ge: From bulk to nanodevices

  • Author

    Rideau, D. ; Zhang, W. ; Niquet, Y.M. ; Delerue, C. ; Tavernier, C. ; Jaouen, H.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    Using a sp3d5s* tight-binding model for the electrons and a valence force field model for the phonons, we investigate the electron-phonon scattering rates in Si and Ge. The bulk Si mobility calculated with this model (μ = 1400 cm2/V/s) and its temperature dependence agree well with experimental data. We are able to analyze the much lower values obtained in Si nanowires where both carriers and phonons are confined.
  • Keywords
    Brillouin zones; carrier density; electron-phonon interactions; elemental semiconductors; germanium; nanowires; silicon; tight-binding calculations; Brillouin zone; Ge; Si; carrier density; electron-phonon scattering; nanodevices; nanowires; tight-binding model; valence force field model; Computational modeling; Logic gates; Mechanical factors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6035046
  • Filename
    6035046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3521047