DocumentCode :
3521068
Title :
Mold process development of C90 LowK and ultra-finepitch BGA for robust reliability performance
Author :
Ibrahim, Ruzaini ; Low, Boon-Yew ; Poh, Zi-Song
Author_Institution :
Freescale Semicond. (M) Sdn Bhd, Petaling Jaya, Malaysia
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
352
Lastpage :
356
Abstract :
The use of porous material as dielectric for C90 has imposed significant challenge for package encapsulation due to its porous nature which requires extremely low stress condition under thermal excursion. This paper discussed the challenges in defining the critical characteristics in packaging with special emphasis on molding process in order to achieve robust and reliable package. Key challenges in this particular development was imposed by the increase in package body size, the tightening in wirebond pitch, increased in wire count and tiers, and the inclusion of metal heat spreaders. These factors have significant impact on the mold compound flow and the distribution of filler in the molded package which was found to be responsible for delamination and electrical failure. The resolution to the problem focused on the reduction in average filler size and distribution to improve filler and matrix composition across the molded region. The improvement in these areas has enabled the package to surpass 1000 cycles of temperature cycling and met qualification reliability stress requirement.
Keywords :
ball grid arrays; encapsulation; fine-pitch technology; lead bonding; moulding; porous materials; reliability; metal heat spreaders; mold process development; package encapsulation; porous material; robust reliability performance; ultra finepitch BGA; wire count; wirebond pitch; Composite materials; Dielectric materials; Electronic packaging thermal management; Encapsulation; Microassembly; Robustness; Silicon compounds; Thermal expansion; Thermal stresses; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5099-2
Electronic_ISBN :
978-1-4244-5100-5
Type :
conf
DOI :
10.1109/EPTC.2009.5416522
Filename :
5416522
Link To Document :
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