Title :
Properties of InAs- and silicon-based ballistic spin field-effect transistors
Author :
Osintsev, Dmitri ; Sverdlov, Viktor ; Makarov, Alexander ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
We investigate the transport properties of ballistic spin field-effect transistors. The transistor characteristics are examined for a broad range of parameters including the semiconductor channel length, the conduction band mismatch between the channel and the contacts, the strength of the spin-orbit interaction, and the magnetic field. We show that temperature exerts a significant influence on the device characteristics. For the InAs-based transistors a shorter channel is preferred for potential operations at room temperature. For the silicon-based transistors we demonstrate that the [100] fin orientation displays a stronger dependence of the magnetoresistanse on the strength of the spin-orbit interaction and is therefore best suited for practical realization of the silicon spin transistor.
Keywords :
III-V semiconductors; MOSFET; elemental semiconductors; indium compounds; magnetic fields; silicon; spin-orbit interactions; InAs; Si; conduction band mismatch; fin orientation; magnetic field; semiconductor channel length; silicon-based ballistic spin field effect transistor; spin-orbit interaction; transport properties; Contacts; Magnetic fields; Oscillators; Silicon; Temperature; Transistors; Tunneling magnetoresistance; Dresselhaus spin-orbit interaction; Spin field-effect transistor; temperature; tunneling magnetoresistance;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035049