• DocumentCode
    352113
  • Title

    Use of commercial VDMOSFETs in electronic systems subjected to radiation

  • Author

    Picard, C. ; Brisset, C. ; Quittard, O. ; Marceau, M. ; Hoffmann, A. ; Joffre, F. ; Charles, J.-P.

  • Author_Institution
    LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    333
  • Lastpage
    339
  • Abstract
    This study explores the effectiveness of pre-irradiation as a hardening technique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whereby a small change in Rdson is observed
  • Keywords
    power MOSFET; radiation hardening (electronics); COTS components; commercial VDMOSFETs; electronic power systems; electronic systems; hardening technique; pre-irradiation; radiation; radiation tolerance; Fabrication; IEEE members; Industrial power systems; Leakage current; MOS devices; MOSFETs; Nuclear electronics; Radiation hardening; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
  • Conference_Location
    Fontevraud
  • Print_ISBN
    0-7803-5726-4
  • Type

    conf

  • DOI
    10.1109/RADECS.1999.858604
  • Filename
    858604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=352113