Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

Author

Jaksic, A.B. ; Pejovic, M.M. ; Ristic, G.S.

Author_Institution

Fac. of Electron. Eng., Nis, Yugoslavia

fYear

1999

fDate

1999

Firstpage

406

Lastpage

413

Abstract

The paper presents results of a study of post-irradiation effects in two types of gamma-ray irradiated power VDMOSFETS, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena

Keywords

annealing; gamma-ray effects; power MOSFET; power semiconductor switches; semiconductor device measurement; charge-pumping measurements; constant gate bias; gamma-ray irradiated FETs; irradiated commercial power VDMOSFETs; isochronal annealing experiments; isothermal annealing experiments; post-irradiation effects; switching gate bias; Annealing; Charge pumps; Current measurement; Isothermal processes; Power engineering and energy; Pulp manufacturing; Semiconductor device manufacture; Temperature; Thermal degradation; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858616

Filename

858616