DocumentCode :
3521182
Title :
Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders
Author :
Sasangka, W.A. ; Gan, C.L. ; Thompson, C.V. ; Choi, W.K. ; Wei, J.
Author_Institution :
Adv. Mater. for Micro- & Nano-Syst., Singapore-MIT Alliance, Singapore, Singapore
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
336
Lastpage :
341
Abstract :
In the present study, the interaction between thin film Cu and non-eutectic Sn-In is studied. The effects of the bonding and aging temperature on microstructure, IMC formation and also shear strength are investigated by SEM/EDX, XRD and shear testing. The bonding mechanism is proposed based on the obtained results. The bonding mechanism is proposed to occur over 2 stages: (1) An increase in bonding temperatures leads to an increase in the true contact area, and (2) The aging temperature leads to interdiffusion and assists formation of the IMC. The type of IMC that forms is ¿ phase (Cu6(Sn, In)5) which is similar to the interaction between Cu and eutectic Sn-In. The shear strength increases with increasing the bonding temperature. On the other hand, the aging temperature does not have a significant impact on the shear strength. This indicates that the shear strength is mostly affected by the true contact area rather than the IMC formation.
Keywords :
ageing; bonding processes; copper; electronics packaging; shear strength; solders; tin alloys; 75Sn25In solder; EDX; IMC formation; SEM; Sn-In; XRD; aging temperature; bond strength; bonding temperature; interdiffusion; microstructure; noneutectic Sn-In; shear strength; shear testing; thin film copper; Aging; Bonding; Materials science and technology; Microelectronics; Microstructure; Plasma temperature; Temperature sensors; Testing; Transistors; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5099-2
Electronic_ISBN :
978-1-4244-5100-5
Type :
conf
DOI :
10.1109/EPTC.2009.5416527
Filename :
5416527
Link To Document :
بازگشت