Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

Author

Gill, K. ; Azevedo, C. ; Batten, J. ; Cervelli, G. ; Grabit, R. ; Jensen, F. ; Troska, Jan ; Vasey, F.

Author_Institution

EP Div., CERN, Geneva, Switzerland

fYear

1999

fDate

1999

Firstpage

429

Lastpage

436

Abstract

The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80°C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; p-i-n photodiodes; radiation effects; semiconductor lasers; 1310 nm; 4000 h; 80 C; CERN; CMS experiment; Compact Muon Solenoid experiment; InGaAs; InGaAs p-i-n photodiodes; InGaAsP; InGaAsP edge-emitting lasers; ageing tests; efficiency; laser threshold; p-i-n leakage current; photocurrent; photodiodes; radiation damaged lasers; wearout related degradation; Accelerated aging; Current measurement; Degradation; Indium gallium arsenide; Leakage current; Life testing; Mesons; PIN photodiodes; Photoconductivity; Solenoids;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858620

Filename

858620