DocumentCode :
352120
Title :
Radiation effects on active pixel sensors
Author :
Cohen, M. ; David, J.P.
Author_Institution :
ONERA/DESP, Toulouse, France
fYear :
1999
fDate :
1999
Firstpage :
450
Lastpage :
456
Abstract :
An active pixel sensor (APS) is defined as a CMOS detector array that has at least one active transistor integrated into the pixel. Two kinds of detector arrays were used: one photodiode and one photogate. Their tolerance against total dose and proton irradiations are evaluated
Keywords :
CCD image sensors; CMOS image sensors; adaptive optics; proton effects; CMOS detector array; active pixel sensors; photodiode; photogate; proton irradiations; radiation effects; total dose; CMOS image sensors; Charge transfer; Circuit noise; Detectors; Noise reduction; Photodiodes; Radiation effects; Sensor arrays; Space technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
Type :
conf
DOI :
10.1109/RADECS.1999.858623
Filename :
858623
Link To Document :
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