• DocumentCode
    3521238
  • Title

    Improvement of morphological and electrical properties in poly (3-hexylthiophene-2, 5-diyl) Films Formed by Thermal Annealing in the presence of electric field during the solvent drying step

  • Author

    Bagui, Anirban ; Iyer, S. Sundar Kumar

  • Author_Institution
    Dept. of Phys., IIT Kanpur, Kanpur, India
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    The morphological and electrical properties of poly(3-hexylthiophene-2,5-diyl) (P3HT) films play an important role in the performance of optoelectronic devices fabricated from them, especially organic solar cells. Higher crystallinity in P3HT films can be achieved by application of electric field during solvent drying when the film is formed at a temperature higher than the glass transition temperature. The improvement in P3HT film crystallinity is confirmed with x-ray diffraction measurements. The hole mobility in the improved films, determined by fabricating `hole-only´ devices with P3HT films, is found to be significantly higher than the hole mobility in films formed without application of electric field. Both the crystallinity and hole mobility in P3HT films monotonically increases with applied electric field during the solvent drying step. The reasons for these observations are explored with the help of computer simulations.
  • Keywords
    X-ray diffraction; annealing; crystallisation; optoelectronic devices; polymer films; solar cells; P3HT film crystallinity; X-ray diffraction measurements; computer simulations; electric field; electrical properties; hole mobility; hole-only device fabrication; morphological properties; optoelectronic devices; organic solar cells; poly (3-hexylthiophene-2, 5-diyl) films; solvent drying step; thermal annealing; Annealing; Electric fields; Films; Indium tin oxide; Photovoltaic cells; Plastics; Solvents; Annealing; Current measurement; Photovoltaic cells; Plastics; Solvents;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6318058
  • Filename
    6318058