• DocumentCode
    3521247
  • Title

    2-Metal-layer interposer for high-speed devices

  • Author

    Hui, Chong Chin

  • Author_Institution
    Micron Semicond. Asia Pte. Ltd., Singapore, Singapore
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    311
  • Lastpage
    316
  • Abstract
    As both device pin density and system frequency increase, printed circuit board layout becomes more complex. A successful high-speed printed circuit board design must effectively integrate the devices and other elements, while avoiding signal transmission problems that are associated with high-speed IO standards. This is evident in the memory platform where the data rate is reaching the GHz zone. Stringent designs like matched IO traces and effective ground/power metal plane are required to ensure signal integrity. Existing DRAM packages are supported by a 1-metal-layer interposer in a BOC (Board on Chip) package. However, demand for higher speed performance and an industrial push for low- power efficient devices (data server market), there is a need to look at the packaging requirements.
  • Keywords
    DRAM chips; design of experiments; integrated circuit packaging; printed circuit layout; 2-metal-layer interposer; DRAM packages; high-speed devices; printed circuit board design; printed circuit board layout; Electronic packaging thermal management; Frequency; Inductance; Plastic packaging; Printed circuits; Signal design; Switches; Thermal stresses; US Department of Energy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416530
  • Filename
    5416530