Title :
Impact of substrate bias on GIDL for thin-BOX ETSOI devices
Author :
Kulkarni, P. ; Liu, Q. ; Khakifirooz, A. ; Zhang, Y. ; Cheng, K. ; Monsieur, F. ; Oldiges, P.
Author_Institution :
IBM, Albany NanoTech, Albany, NY, USA
Abstract :
We present a detailed analysis of substrate bias (Vbb) impact on gate induced drain leakage (GIDL) for thin-BOX extremely thin silicon-on-insulator (ETSOI) with BOX thickness (TBOX) ranging from 10 to 50 nm and inversion layer thicknesses (TINV) ranging from 1.1 to 1.3 nm. The GIDL behavior for thin-BOX under various substrate biases (Vbb) and partially depleted SOI (PDSOI) devices with different body doping are compared.
Keywords :
inversion layers; semiconductor doping; silicon-on-insulator; thin film transistors; BOX thickness; GIDL; PDSOI device; doping; gate induced drain leakage; inversion layer thicknesses; partially depleted SOI; size 1.1 nm to 1.3 nm; size 10 nm to 50 nm; substrate bias impact; thin buried oxide device; thin-BOX ETSOI device; thin-BOX extremely thin silicon-on-insulator device; Doping; Electric fields; Electric potential; Junctions; Logic gates; Substrates; Tunneling; GIDL; Thin-BOX ETSOI; UTBB; back bias; electric field; fully depleted; partially depleted; substrate bias;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035060
