Title :
Electric and optical transport of MWNT/silicon junctions
Author :
Mohammed, Muatez ; Li, Zhongrui ; Cui, Jingbiao ; Chen, Tan-pin
Author_Institution :
Dept. of Phys. & Astron., Univ. of Arkansas at Little RockArkansas, Little Rock, AR, USA
Abstract :
The as-sonicated (So), supernatant (Su) and sediment (Se) of the MWNT product were respectively sprayed onto differently doped-silicon wafers. The current rectification properties of these formed heterojunctions between the MWNTs and silicon substrates were compared. It was found that the p-type Si forms an ohmic contact with the MWNT film but the MWNT/n-doped Si heterojunction is rectifying. We also observed photovoltaic conversions in MWNT/n-type Si junction with the illumination of a solar simulator.
Keywords :
carbon nanotubes; elemental semiconductors; ohmic contacts; semiconductor doping; semiconductor heterojunctions; silicon; MWNT film; MWNT product as-sonication; MWNT product sediment; MWNT product supernatant; MWNT-n-doped silicon heterojunction; MWNT/n-type silicon junction; Si; current rectification properties; doped-silicon wafers; electric transport; multiwall carbon nanotube; ohmic contact; optical transport; p-type silicon; photovoltaic conversions; silicon substrates; solar simulator illumination; Carbon nanotubes; Electron tubes; Heterojunctions; Metals; Silicon; Substrates; Sediment; Silicon Junctions; Sonicated; Supernatant;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318061
