Integrated inductors on silicon and planarized ceramic substrates

Passive integration is one of the important issues for system miniaturization in wireless applications on different substrate. Integrated inductors were designed and realized on both silicon and planarized ceramic substrate. Planarized ceramic substrate has the advantages such as lower cost than polished ceramic substrate and has other advantages such as lower dielectric constant, higher bulk resistance than silicon substrate. The L values of fabricated inductors on planarized ceramic substrate are about 1 nH, the peak values of Q are about 30 and the corresponding frequency is about 10 GHz. By contrast, for the Inductors fabricated on silicon substrate with the same process, the L values is more or less the same with those on ceramic substrate, the Q peak value is about 7 lower, the corresponding frequency is about 5 GHz.