A simplified methodology for the extraction of the ACM MOST model parameters

Author

Coitinho, Rafael M. ; Spiller, Luís H. ; Schneider, Mkcio C. ; Galup-Montoro, Carlos

Author_Institution

Dept. of Electr. Eng., Univ. Fed. de Santa Catarina, Florianopolis, Brazil

fYear

2001

fDate

2001

Firstpage

136

Lastpage

141

Abstract

The ACM model is a powerful tool for the simulation of MOS transistors. Unlike most of the available models, it presents simple and precise equations, allied to a small number but meaningful physical parameters. This paper presents a simplified methodology for extracting the parameters of the ACM model. Unlike usual methods for device characterization, which require the availability of expensive equipment, this methodology is based on simulation. Simple and low cost, it can be reproduced easily by those who plan to use the ACM model but do not know its parameters for a given process. In this work, the ACM parameters were extracted from the BSIM 3 parameters available for a 0.8 μm technology

Keywords

MOSFET; semiconductor device models; 0.8 micron; ACM model; ACM parameters; MOS transistors; MOSFET simulation; MOST model parameters; model parameter extraction; CMOS technology; Circuit simulation; Costs; Differential equations; Electronic circuits; MOSFET circuits; Physics; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 2001, 14th Symposium on.

Conference_Location

Pirenopolis

Print_ISBN

0-7695-1333-6

Type

conf

DOI

10.1109/SBCCI.2001.953016

Filename

953016