Semiconductor material process with UV laser irradiation

Author

Cheng-Yen Chen ; Chung-Yen Chao ; Zong-Kwei Wu ; Chee-Wee Liu ; Yang, C.C. ; Yih Chang

Author_Institution

Coll. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1998

fDate

3-8 May 1998

Firstpage

153

Lastpage

154

Abstract

Summary form only given. We present our results of using UV laser for processing silicon and GaAs. The laser source is the fourth harmonic (266 nm) of a Q-switched Nd:YAG laser. This laser source is highly coherent so that interference fringes can be easily formed. We have used a prism to form interference fringes for directly ablating gratings on the surface of silicon, GaAs, GaN, and LiNbO/sub 3/. Such gratings can find many applications such as laser-cavity feedback and temperature sensing. We discuss the responses of these materials to the laser irradiation.

Keywords

III-V semiconductors; diffraction gratings; elemental semiconductors; gallium arsenide; gallium compounds; laser ablation; lithium compounds; optical fabrication; silicon; wide band gap semiconductors; 266 nm; GaAs; GaN; LiNbO/sub 3/; Q-switched Nd:YAG laser; Si; UV laser irradiation; YAG:Nd; YAl5O12:Nd; directly ablating gratings; fourth harmonic; interference fringe; laser ablation; laser-cavity feedback; semiconductor material processing; temperature sensing; Gallium arsenide; Gallium nitride; Gratings; Interference; Laser applications; Laser feedback; Semiconductor lasers; Semiconductor materials; Silicon; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675988

Filename

675988