Title :
Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator
Author :
Mochizuki, M. ; Hayashi, H. ; Ishii, S. ; Ohira, S. ; Kurachi, I. ; Miura, N.
Author_Institution :
OKI Semicond. Co., Ltd., Yokohama, Japan
Abstract :
Drain current of SOI H-type body-tied MOSFET can be modulated in gate length or width because of its additional gate region. It causes a serious problem especially in analog circuit design. There is, however, no model including the gate shape effect even in the newest release BSIMSOI [1]. An accurate and global model of SOI H-type body-tied MOSFET in circuit simulation has been proposed for the first time. It is confirmed that the simulation accuracy of the proposed model has greatly improved within 10% RMS error compared to the existing model.
Keywords :
MOSFET; analogue circuits; circuit simulation; semiconductor device models; silicon-on-insulator; BSIMSOI; SOI H gate body-tied MOSFET; Si; analog circuit design; circuit simulator; drain current; gate length; gate shape effect; Current density; Data models; Integrated circuit modeling; Logic gates; MOSFET circuits; Semiconductor device modeling; H gate; SOI; body-tied; circuit simulation; compact model;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035071
