Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator

Author

Mochizuki, M. ; Hayashi, H. ; Ishii, S. ; Ohira, S. ; Kurachi, I. ; Miura, N.

Author_Institution

OKI Semicond. Co., Ltd., Yokohama, Japan

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

247

Lastpage

250

Abstract

Drain current of SOI H-type body-tied MOSFET can be modulated in gate length or width because of its additional gate region. It causes a serious problem especially in analog circuit design. There is, however, no model including the gate shape effect even in the newest release BSIMSOI [1]. An accurate and global model of SOI H-type body-tied MOSFET in circuit simulation has been proposed for the first time. It is confirmed that the simulation accuracy of the proposed model has greatly improved within 10% RMS error compared to the existing model.

Keywords

MOSFET; analogue circuits; circuit simulation; semiconductor device models; silicon-on-insulator; BSIMSOI; SOI H gate body-tied MOSFET; Si; analog circuit design; circuit simulator; drain current; gate length; gate shape effect; Current density; Data models; Integrated circuit modeling; Logic gates; MOSFET circuits; Semiconductor device modeling; H gate; SOI; body-tied; circuit simulation; compact model;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6035071

Filename

6035071