DocumentCode :
3521475
Title :
A low power WiMAX LNA with noise cancellation
Author :
Wu, J.M. ; Yang, N.K. ; Li, S.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung
fYear :
2008
fDate :
25-27 Aug. 2008
Firstpage :
286
Lastpage :
288
Abstract :
This paper presents a low noise amplifier (LNA) employing a noise cancellation technique for WiMAX applications. The design of LNA is based on the input impedance matching with noise cancellation in 0.35-mum standard SiGe BiCMOS process. The chip size is equal to 0.84 mm times 0.18 mm. The crucial simulated results include that the noise figure (NF) is below 2.1 dB in the frequency range of 2 GHz to 3 GHz, the gain is equal to 13.3 dB at 2.6 GHz, the input 1 dB compression point (IP1dB) is 11 dBm, and the input-referred third-order intercept point (IIP3) is 2.5 dBm. The power consumption is 13.2 mW from the supply voltage of 1.8 V. The NF is improved by 0.73 dB using a noise cancellation technique.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; WiMax; impedance matching; interference suppression; low noise amplifiers; BiCMOS process; SiGe; frequency 2 GHz to 3 GHz; impedance matching; low noise amplifier; low power WiMAX LNA; noise cancellation; power 13.2 mW; size 0.35 mum; voltage 1.8 V; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise cancellation; Noise figure; Noise measurement; Silicon germanium; WiMAX; Low noise amplifier (LNA); WiMAX; low power; noise cancellation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Networking in China, 2008. ChinaCom 2008. Third International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-2373-6
Electronic_ISBN :
978-1-4244-2374-3
Type :
conf
DOI :
10.1109/CHINACOM.2008.4685022
Filename :
4685022
Link To Document :
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