A low power WiMAX LNA with noise cancellation

Author

Wu, J.M. ; Yang, N.K. ; Li, S.C.

Author_Institution

Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung

fYear

2008

fDate

25-27 Aug. 2008

Firstpage

286

Lastpage

288

Abstract

This paper presents a low noise amplifier (LNA) employing a noise cancellation technique for WiMAX applications. The design of LNA is based on the input impedance matching with noise cancellation in 0.35-mum standard SiGe BiCMOS process. The chip size is equal to 0.84 mm times 0.18 mm. The crucial simulated results include that the noise figure (NF) is below 2.1 dB in the frequency range of 2 GHz to 3 GHz, the gain is equal to 13.3 dB at 2.6 GHz, the input 1 dB compression point (IP_1dB) is 11 dBm, and the input-referred third-order intercept point (IIP₃) is 2.5 dBm. The power consumption is 13.2 mW from the supply voltage of 1.8 V. The NF is improved by 0.73 dB using a noise cancellation technique.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; WiMax; impedance matching; interference suppression; low noise amplifiers; BiCMOS process; SiGe; frequency 2 GHz to 3 GHz; impedance matching; low noise amplifier; low power WiMAX LNA; noise cancellation; power 13.2 mW; size 0.35 mum; voltage 1.8 V; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise cancellation; Noise figure; Noise measurement; Silicon germanium; WiMAX; Low noise amplifier (LNA); WiMAX; low power; noise cancellation;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Networking in China, 2008. ChinaCom 2008. Third International Conference on

Conference_Location

Hangzhou

Print_ISBN

978-1-4244-2373-6

Electronic_ISBN

978-1-4244-2374-3

Type

conf

DOI

10.1109/CHINACOM.2008.4685022

Filename

4685022