Title :
Modeling temperature and bias stress effects on threshold voltage of a-Si:H TFTs for gate driver circuit simulation
Author :
Shen, Cheng-Han ; Li, Yiming ; Lo, I-Hsiu ; Lin, Po-Jui ; Chung, Sheng-Chuan
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT) have been important device in modern display panel production. In this paper, we study amorphous silicon thin-film-transistor (TFT) degradation under temperature and bias stresses. Rensselear polytechnic institute (RPI) model is widely used for circuit simulation of a-Si:H TFTs, but the temperature (T = -20 - +65°C) and bias stress effects are not considered in the RPI model. The parameters of sub-threshold in the RPI model with temperature and bias stress effects are explored and formulated with the measured I-V data. The results can be used together with the existing model, and thus can describe the temperature dependent characteristics of a-Si:H TFTs well. A 14 a-Si:H TFTs integrated gate (ASG) driver circuit is simulated and tested using the modified RPI model card. The simulations predict the temperature effect on the dynamic properties of ASG circuit and power consumption.
Keywords :
amorphous semiconductors; driver circuits; elemental semiconductors; hydrogen; semiconductor device models; silicon; stress effects; thin film transistors; RPI model; Rensselear polytechnic institute model; Si:H; TFT; amorphous silicon thin-film-transistor; bias stress effects; display panel production; gate driver circuit simulation; integrated gate driver circuit; power consumption; temperature -20 degC to 65 degC; temperature dependent characteristics; temperature effect; threshold voltage; Economic indicators; Integrated circuit modeling; Stress; Temperature; Temperature measurement; Thin film transistors; Threshold voltage; ASG circuit; Amorphous silicon TFT; RPI model; Rensselaer Polytechnic Institute (RPI) model; bias stress effect; circuit simulation; power comsumption; temperature effect; threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035072