3D modeling based on current continuity for STM carrier profiling of semiconductor devices

Author

Fukuda, Koichi ; Nishizawa, Masayasu ; Tada, Tetsuya ; Bolotov, Leonid ; Suzuki, Kaina ; Sato, Shigeo ; Arimoto, Hiroshi ; Kanayama, Toshihiko

Author_Institution

Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

259

Lastpage

262

Abstract

Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity model under depletion conditions. Spatial resolution achieved in the model is discussed in comparison to potential based modeling. Influence of discrete dopants is also discussed in concern with Coulomb potential fluctuations in nanoscale systems, which is a key issue of nano devices.

Keywords

nanoelectronics; scanning tunnelling microscopy; semiconductor device models; tunnelling; 3D modeling; Coulomb potential fluctuation; STM carrier profiling; current continuity; depletion condition; discrete dopants; nanoscale devices; probe tip; scanning tunneling microscopy; semiconductor devices; tunnel current; Electric potential; Junctions; Probes; Semiconductor device measurement; Semiconductor process modeling; Three dimensional displays; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6035074

Filename

6035074