Title :
3D modeling based on current continuity for STM carrier profiling of semiconductor devices
Author :
Fukuda, Koichi ; Nishizawa, Masayasu ; Tada, Tetsuya ; Bolotov, Leonid ; Suzuki, Kaina ; Sato, Shigeo ; Arimoto, Hiroshi ; Kanayama, Toshihiko
Author_Institution :
Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
Abstract :
Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity model under depletion conditions. Spatial resolution achieved in the model is discussed in comparison to potential based modeling. Influence of discrete dopants is also discussed in concern with Coulomb potential fluctuations in nanoscale systems, which is a key issue of nano devices.
Keywords :
nanoelectronics; scanning tunnelling microscopy; semiconductor device models; tunnelling; 3D modeling; Coulomb potential fluctuation; STM carrier profiling; current continuity; depletion condition; discrete dopants; nanoscale devices; probe tip; scanning tunneling microscopy; semiconductor devices; tunnel current; Electric potential; Junctions; Probes; Semiconductor device measurement; Semiconductor process modeling; Three dimensional displays; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035074
