Title :
100 mW High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-μm Wavelength
Author :
Jung Ho Song ; Kisoo Kim ; Young Ahn Leem ; Gyungock Kim
Author_Institution :
IT Convergence & Components Lab. (ICCL), Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A superluminescent diode with selectively grown multi-quantum-well layer is realized with greater than 100 mW output power, a spectral bandwidth of 60 nm and spectral modulation of less than 0.3 dB at 1.5 mm wavelength.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; superluminescent diodes; InGaAsP; high power broadband superluminescent diode; multiquantum well layer; power 100 mW; wavelength 1.5 mm; wavelength 1.5 mum; Absorption; Bandwidth; Optical modulation; Optical pumping; Optical sensors; Optical waveguides; Power generation; Quantum dots; Quantum well devices; Superluminescent diodes;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528198
