Title :
Analytical approximation of complex band structures for band-to-band tunneling models
Author :
Guan, Ximeng ; Kim, Donghyun ; Saraswat, Krishna C. ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
A unified analytical expression is developed to accurately describe the complex band structures in commonly used diamond and zinc-blende semiconductors. Fitting the model to the numerical complex band structures shows a significantly improved accuracy as compared with the effective mass approximation. The model is used to study the band-to-band tunneling in Si, Ge, GaAs and GaSb, with a maximum error of <;1.4% compared to the numerical band structures.
Keywords :
III-V semiconductors; band structure; effective mass; elemental semiconductors; gallium arsenide; gallium compounds; germanium; silicon; tunnelling; GaAs; GaSb; Ge; Si; band structures; band-band tunneling models; diamond; effective mass approximation; zinc-blende semiconductors; Approximation methods; Effective mass; Fitting; Numerical models; Silicon; Tunneling; band-to-band tunneling; complex band structure; effective mass approximation; non-parabolic approximation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035076
