Title :
Physical circuit-device simulation of ESD and power devices
Author :
Axelrad, V. ; Hayashi, H. ; Kurachi, I.
Author_Institution :
SEQUOIA Design Syst., CA, USA
Abstract :
An industrial methodology for physically accurate and efficient simulation of high-field/high-voltage events such as ESD and power applications has been presented. The methodology has been applied to a number of varied industrial problems with excellent results validated by experimental data. Our approach helps make physical simulation available to designers in cases where simulation has not been widely used previously, in particular for circuit optimization of ESD protection in logic as well as power ICs.
Keywords :
circuit optimisation; circuit simulation; electrostatic discharge; power integrated circuits; ESD protection; circuit optimization; high-voltage event; industrial methodology; physical circuit device simulation; physical simulation; power IC; power device; Computational modeling; Electrostatic discharge; Finite element methods; Heating; Integrated circuit modeling; Stress; Transmission line measurements;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035079