Title :
TCAD simulations of irradiated power diodes over a wide temperature range
Author :
Bellini, Marco ; Vobecký, Jan
Author_Institution :
ABB Corp. Res., Dattwil, Switzerland
Abstract :
A SRH model with temperature-dependent capture cross-sections is proposed for a better accuracy of TCAD simulations of combined ion and electron irradiated power diodes over a large temperature range. A robust procedure is proposed for the identification of the model parameters of deep levels on the basis of static and dynamic diode measurements.
Keywords :
digital simulation; parameter estimation; power semiconductor diodes; semiconductor device models; technology CAD (electronics); SRH model; TCAD simulations; dynamic diode measurements; electron irradiated power diodes; model parameter identification; temperature-dependent capture cross-sections; Fitting; Helium; Mathematical model; Optimization; Semiconductor device modeling; Temperature; Temperature measurement; TCAD; power diodes; trap models;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035081
