DocumentCode
3521667
Title
TCAD simulations of irradiated power diodes over a wide temperature range
Author
Bellini, Marco ; Vobecký, Jan
Author_Institution
ABB Corp. Res., Dattwil, Switzerland
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
183
Lastpage
186
Abstract
A SRH model with temperature-dependent capture cross-sections is proposed for a better accuracy of TCAD simulations of combined ion and electron irradiated power diodes over a large temperature range. A robust procedure is proposed for the identification of the model parameters of deep levels on the basis of static and dynamic diode measurements.
Keywords
digital simulation; parameter estimation; power semiconductor diodes; semiconductor device models; technology CAD (electronics); SRH model; TCAD simulations; dynamic diode measurements; electron irradiated power diodes; model parameter identification; temperature-dependent capture cross-sections; Fitting; Helium; Mathematical model; Optimization; Semiconductor device modeling; Temperature; Temperature measurement; TCAD; power diodes; trap models;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035081
Filename
6035081
Link To Document