• DocumentCode
    3521713
  • Title

    Impact of energetic disorder and localization on the conductivity and mobility of organic semiconductors

  • Author

    Torricelli, Fabrizio ; Colalongo, Luigi ; Milani, Luca ; Kovács-Vajna, Zsolt Miklós ; Cantatore, Eugenio

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    The impact of the energetic disorder and the charge localization on the conductivity, mobility and carrier concentration is investigated both theoretically and experimentally. This study gives three fundamental results: (i) the magnitude of the conductivity is strongly dependent on the spatial charge localization but (ii) the conductivity as a function of temperature and Fermi level is independent on the shape of the Density of States (DOS). On the other hand (iii) the mobility is strongly influenced by the DOS, hence the DOS affect the mobility only indirectly through the charge concentration. We show that many experimental observation and theoretical investigations can be merged in a simple physical framework based on hopping and percolation. The spatial localization and energetic disorder are the key elements to reach an unified picture of the mobility of organic semiconductors.
  • Keywords
    Fermi level; carrier density; carrier mobility; electronic density of states; hopping conduction; organic semiconductors; percolation; Fermi level; carrier concentration; carrier mobility; charge concentration; density of states; electrical conductivity; energetic disorder; hopping conduction; organic semiconductors; percolation; spatial charge localization; Charge carriers; Conductivity; Mathematical model; Numerical models; Organic semiconductors; Thin film transistors; Conductivity; DOS; Energetic disorder; Hopping; Localization; Mobility; Percolation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6035084
  • Filename
    6035084