DocumentCode
3521713
Title
Impact of energetic disorder and localization on the conductivity and mobility of organic semiconductors
Author
Torricelli, Fabrizio ; Colalongo, Luigi ; Milani, Luca ; Kovács-Vajna, Zsolt Miklós ; Cantatore, Eugenio
Author_Institution
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
195
Lastpage
198
Abstract
The impact of the energetic disorder and the charge localization on the conductivity, mobility and carrier concentration is investigated both theoretically and experimentally. This study gives three fundamental results: (i) the magnitude of the conductivity is strongly dependent on the spatial charge localization but (ii) the conductivity as a function of temperature and Fermi level is independent on the shape of the Density of States (DOS). On the other hand (iii) the mobility is strongly influenced by the DOS, hence the DOS affect the mobility only indirectly through the charge concentration. We show that many experimental observation and theoretical investigations can be merged in a simple physical framework based on hopping and percolation. The spatial localization and energetic disorder are the key elements to reach an unified picture of the mobility of organic semiconductors.
Keywords
Fermi level; carrier density; carrier mobility; electronic density of states; hopping conduction; organic semiconductors; percolation; Fermi level; carrier concentration; carrier mobility; charge concentration; density of states; electrical conductivity; energetic disorder; hopping conduction; organic semiconductors; percolation; spatial charge localization; Charge carriers; Conductivity; Mathematical model; Numerical models; Organic semiconductors; Thin film transistors; Conductivity; DOS; Energetic disorder; Hopping; Localization; Mobility; Percolation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035084
Filename
6035084
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