Title :
Effects of the field dependent occupation of electrical-stress-generated traps on the conduction and breakdown of thin SiO2 films
Author :
Barniol, N. ; Sune, J. ; Farres, E. ; Placencia, I. ; Aymerich, X.
Author_Institution :
Dept. de Fisica, Univ. Autonoma de Barcelona, Spain
Abstract :
The authors study the influence of the partial occupation of the NTS (neutral trapping sites) on the Fowler-Nordheim injection and on the evolution of the stress specifications for thin SiO2 films. The results indicate that ν can be considered to be constant in constant-voltage stress and constant-current stress experiments. However, in the case of voltage ramp experiments, this condition is not satisfied and the transmission coefficient has to be numerically recalculated after small time intervals to determine the evolution of the current and of the NTS density with stress time. It is also shown that the partial compensation of the field dependences of the generation rate and the occupation function is such that the evolution of the applied field with time is pseudolinear
Keywords :
electric breakdown of solids; electronic conduction in insulating thin films; hole traps; insulating thin films; silicon compounds; tunnelling; Fowler-Nordheim injection; breakdown; constant-current stress; constant-voltage stress; electrical conduction; electrical-stress-generated traps; field dependent occupation; insulating thin film; neutral trapping sites; partial compensation; partial occupation; thin SiO2 films; transmission coefficient; voltage ramp; Ambient intelligence; Current density; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; Equations; Kinetic energy; Occupational stress; Steady-state;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
DOI :
10.1109/ICSD.1989.69182
