Title :
Enhanced photovoltaic properties of a-C/Si heterojunction solar cells
Author :
Adhikari, Sudip ; Ghimire, Dilip C. ; Adhikary, Sunil ; Uchida, Hideo ; Wakita, Koichi ; Umeno, Masayoshi
Author_Institution :
Dept. of Electron. & Inf. Eng., Chubu Univ., Kasugai, Japan
Abstract :
Boron doped amorphous carbon (a-C) thin films were synthesized by microwave surface wave plasma (MW SWP) chemical vapor deposition (CVD). The XPS results show successful doping of boron into the films, whereas atomic concentration of B into the films was about 1.6 at. %. Hall measurements indicate that the films were p-type in semiconducting nature. TEM and Raman results showed that the some graphene layers are grown into the a-C film. The photovoltaic measurement of a-C:B/n-Si heterojunction solar cell displayed rectifying I-V characteristics under dark and illumination (AM 1.5 100 mW/cm2) showed photovoltaic behavior with open-circuit voltage (Voc) of 0.21 V, short circuit current density (Jsc) of 31.88 mA/cm2, fill factor (FF) of 0.36 and conversion efficiency (η) of 2.4 %. The films show photoconductive.
Keywords :
chemical vapour deposition; semiconductor thin films; short-circuit currents; silicon; solar cells; transmission electron microscopy; C-Si; CVD; MW SWP; Raman results; TEM; XPS; atomic concentration; boron doped amorphous carbon thin films; boron doping; chemical vapor deposition; conversion efficiency; enhanced photovoltaic properties; fill factor; graphene layers; heterojunction solar cells; microwave surface wave plasma; open-circuit voltage; photovoltaic behavior; photovoltaic measurement; rectifying I-V characteristics; semiconducting nature; short circuit current density; Atom optics; Carbon; Films; Photovoltaic cells; Photovoltaic systems; Silicon; amorphous materials; carbon; graphene; photovoltaic cells; structural properties;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318102
