DocumentCode :
352197
Title :
Floating-gate techniques for assessing mismatch
Author :
Minch, Bradley A.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
4
fYear :
2000
fDate :
2000
Firstpage :
385
Abstract :
I discuss the importance of capacitor matching in the context of using charge stored on floating-gate MOS (FGMOS) transistors to compensate for transistor mismatch in analog circuits. I describe a simple technique that only involves static measurements for assessing the relative mismatch between capacitors. I also show experimental measurements of capacitor mismatch for small capacitors fabricated in 1.2-μm and 0.35-μm double-poly it n-well CMOS process that are commonly available
Keywords :
CMOS analogue integrated circuits; MOSFET; capacitors; semiconductor device measurement; 0.35 micron; 1.2 micron; CMOS analog circuit; capacitor mismatch; floating-gate MOS transistor; static measurement; Analog circuits; CMOS process; Capacitance; Coupling circuits; Current measurement; Decoding; MOS capacitors; MOSFETs; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
Type :
conf
DOI :
10.1109/ISCAS.2000.858769
Filename :
858769
Link To Document :
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