Research of methodologies to enlarge the isolation in 3D interconnection

Author

Zhao, Liwei ; Yang, Long ; Sun, Xin ; Jin, Yufeng

Author_Institution

Nat. Key Lab. of Micro/Nano Fabrication Technol., Peking Univ., Beijing, China

fYear

2009

fDate

10-13 Aug. 2009

Firstpage

331

Lastpage

334

Abstract

As the speed of digital systems continues to increase, digital design has entered a new realm that requires high integration and high complexity with limited dimension. Different from the parameter analysis in low frequency which mainly focuses on resistances and their effects, the coactions of resistances, inductances and capacitances are all needed to be taken into account in high frequency. This paper uses finite element method (FEM) to analyze the coupling and isolation of three types of structures, and presents a measure for the purpose of improving the performance of TSV.

Keywords

integrated circuit design; integrated circuit interconnections; isolation technology; printed circuit design; 3D interconnection; digital design; finite element method; isolation technology; through silicon vias; Capacitance; Digital systems; Electrical resistance measurement; Finite element methods; Frequency; Performance analysis; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4658-2

Electronic_ISBN

978-1-4244-4659-9

Type

conf

DOI

10.1109/ICEPT.2009.5270737

Filename

5270737