Title :
ZnSnN2: A new earth-abundant element semiconductor for solar cells
Author :
Feldberg, N. ; Keen, B. ; Aldous, J.D. ; Scanlon, D.O. ; Stampe, P.A. ; Kennedy, R.J. ; Reeves, R.J. ; Veal, T.D. ; Durbin, S.M.
Author_Institution :
Dept. of Phys., SUNY - Univ. at Buffalo, Buffalo, NY, USA
Abstract :
The Zn-IV-N2 semiconductor family represents a potential earth abundant element alternative for PV and lighting applications, with a predicted band gap range of ~0.6 to ~5 eV. While the Ge and Si containing members of the family have been successfully synthesized, little is known about the lower band gap energy members, in particular ZnSnN2. Here, we report the growth of this compound using a plasma-assisted molecular beam epitaxy technique, and compare experimental optical and structural properties to density functional theory predictions.
Keywords :
density functional theory; energy gap; molecular beam epitaxial growth; plasma materials processing; semiconductor materials; solar cells; tin compounds; zinc compounds; PV applications; Zn-IV-N2 semiconductor family; ZnSnN2; density functional theory; earth-abundant element semiconductor; lighting applications; lower band gap energy members; optical properties; plasma-assisted molecular beam epitaxy technique; solar cells; structural properties; Educational institutions; Photonic band gap; Substrates; Tin; X-ray scattering; Zinc; II-IV-V2; ZnSnN2; earth abundant element; molecular beam epitaxy; photovoltaics;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318108
