DocumentCode
3522224
Title
Bias dependent admittance measurement of GaInNAsSb-based solar cell structure
Author
Islam, Muhammad Monirul ; Miyashita, Naoya ; Ahsan, Nazmul ; Okada, Yoshitaka
Author_Institution
Res. Center for Adv. Sci. & Technol. (RCAST), Univ. of Tokyo, Tokyo, Japan
fYear
2012
fDate
3-8 June 2012
Abstract
Bias dependence of the admittance spectroscopy of GaInNAs(Sb) based solar cell structure has been performed to identify and characterize the type of defects, for example interface and/or bulk defects. Three defect levels E1, E2, and E3 were found at 0.03 eV, 0.07 eV, and 0.16 eV below the conduction band edge, respectively. Bias dependent admittance measurement suggests that E1 peak arises from the free carrier relaxation and the defect level E2 and E3 are bulk type defects.
Keywords
electric admittance measurement; gallium compounds; indium compounds; solar cells; GaInNAsSb; GaInNAsSb-based solar cell structure; admittance spectroscopy; bias dependent admittance measurement; Admittance; Frequency measurement; Gain measurement; Junctions; Levee; Semiconductor device measurement; Spectroscopy; III–V semiconductor materials; admittance measurement; capacitance measurement; p-n junctions; photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6318113
Filename
6318113
Link To Document