Title :
Bias dependent admittance measurement of GaInNAsSb-based solar cell structure
Author :
Islam, Muhammad Monirul ; Miyashita, Naoya ; Ahsan, Nazmul ; Okada, Yoshitaka
Author_Institution :
Res. Center for Adv. Sci. & Technol. (RCAST), Univ. of Tokyo, Tokyo, Japan
Abstract :
Bias dependence of the admittance spectroscopy of GaInNAs(Sb) based solar cell structure has been performed to identify and characterize the type of defects, for example interface and/or bulk defects. Three defect levels E1, E2, and E3 were found at 0.03 eV, 0.07 eV, and 0.16 eV below the conduction band edge, respectively. Bias dependent admittance measurement suggests that E1 peak arises from the free carrier relaxation and the defect level E2 and E3 are bulk type defects.
Keywords :
electric admittance measurement; gallium compounds; indium compounds; solar cells; GaInNAsSb; GaInNAsSb-based solar cell structure; admittance spectroscopy; bias dependent admittance measurement; Admittance; Frequency measurement; Gain measurement; Junctions; Levee; Semiconductor device measurement; Spectroscopy; III–V semiconductor materials; admittance measurement; capacitance measurement; p-n junctions; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318113
