• DocumentCode
    3522234
  • Title

    Lifetime prediction of an IGBT power electronics module under cyclic temperature loading conditions

  • Author

    Lu, Hua ; Bailey, Chris

  • Author_Institution
    Univ. of Greenwich, London, UK
  • fYear
    2009
  • fDate
    10-13 Aug. 2009
  • Firstpage
    274
  • Lastpage
    279
  • Abstract
    The lifetime of an IGBT power electronics module under cyclic temperature loading conditions has been analyzed using finite element analysis method. The failure mechanisms that have been taken into account are the fatigue of the chip-mount-down solder joint, the substrate attach solder joint, the busbar solder joint and the Aluminum wirebond. The results show that the lifetime of the module is about 1000 cycles under the -40 to 125C cyclic temperature loading condition. The critical failure location has been found to be the busbar solder joint and the lack of compliance of the busbar design is the cause of the problem. The objective of this paper is to demonstrate the methodology of using physics of failure approach for the reliability analysis of power electronics modules and highlights the important design parameters that affect the thermal-mechanical fatigue failures of these components.
  • Keywords
    finite element analysis; insulated gate bipolar transistors; power semiconductor devices; semiconductor device reliability; soldering; thermal stress cracking; IGBT power electronics module; aluminum wirebond; busbar solder joint; chip-mount-down solder joint; cyclic temperature loading condition; finite element analysis method; lifetime prediction; reliability analysis; thermal-mechanical fatigue; Aluminum; Copper; Failure analysis; Fatigue; Finite element methods; Insulated gate bipolar transistors; Power electronics; Soldering; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-4658-2
  • Electronic_ISBN
    978-1-4244-4659-9
  • Type

    conf

  • DOI
    10.1109/ICEPT.2009.5270749
  • Filename
    5270749