• DocumentCode
    3522242
  • Title

    An improvement method for the reliability of copper metallization process

  • Author

    Chen, Po-Ying ; Wu, Po-Han ; Ong, Woei Jye

  • Author_Institution
    Dept. of Inf. Eng., I-Shou Univ., Dashu Township, Taiwan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    In this study, a capping layer was deposited after CMP polish when finish the SiO2 layer. These interrelated problems can be solved with a proper fabrication process strategy. This effective strategy will eliminate copper extrusion using in many semiconductor processes. Stronger interface reduce the diffusion of Cu through IMD.
  • Keywords
    ULSI; copper; integrated circuit metallisation; integrated circuit reliability; silicon compounds; Cu; SiO2; advanced ultra-large-scale integration metallization process; capping layer; copper metallization process reliability; fabrication process strategy; semiconductor processes; Conductivity; Contamination; Copper; Fabrication; Metallization; Nitrogen; Semiconductor films; Silicon compounds; Ultra large scale integration; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416583
  • Filename
    5416583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3522242