Title :
An improvement method for the reliability of copper metallization process
Author :
Chen, Po-Ying ; Wu, Po-Han ; Ong, Woei Jye
Author_Institution :
Dept. of Inf. Eng., I-Shou Univ., Dashu Township, Taiwan
Abstract :
In this study, a capping layer was deposited after CMP polish when finish the SiO2 layer. These interrelated problems can be solved with a proper fabrication process strategy. This effective strategy will eliminate copper extrusion using in many semiconductor processes. Stronger interface reduce the diffusion of Cu through IMD.
Keywords :
ULSI; copper; integrated circuit metallisation; integrated circuit reliability; silicon compounds; Cu; SiO2; advanced ultra-large-scale integration metallization process; capping layer; copper metallization process reliability; fabrication process strategy; semiconductor processes; Conductivity; Contamination; Copper; Fabrication; Metallization; Nitrogen; Semiconductor films; Silicon compounds; Ultra large scale integration; Wafer bonding;
Conference_Titel :
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5099-2
Electronic_ISBN :
978-1-4244-5100-5
DOI :
10.1109/EPTC.2009.5416583
