Title :
The equivalent transmission-line approach to resonant tunneling problems described by the Kane model
Author :
Sanada, H. ; Suzuki, M. ; Tsukui, Y. ; Nagai, N.
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
Abstract :
This paper presents a method for solving resonant tunneling problems described by Kane´s two-band and three-band models. The method is based on equivalent transmission-lines for the two-band and three-band models. The well-developed theory of transmission-lines can be effectively used to calculate the transmission properties of resonant tunneling structures. By using the proposed method, quantum mechanical wave problems in resonant tunneling structures composed of various semiconductor materials can be systematically analyzed and guidelines are given for designing new electron wave devices
Keywords :
electron waveguides; equivalent circuits; resonant tunnelling; resonant tunnelling devices; semiconductor device models; transmission line theory; Kane model; electron wave devices; equivalent transmission-line approach; quantum mechanical wave problems; resonant tunneling problems; resonant tunneling structures; semiconductor materials; three-band model; transmission properties; two-band model; Circuit simulation; Electrons; Equivalent circuits; Finite element methods; Guidelines; Quantum mechanics; Resonant tunneling devices; Semiconductor materials; Transmission line matrix methods; Transmission lines;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.858815
