DocumentCode :
3522401
Title :
Electromigration investigations of aluminum alloy interconnects
Author :
Setlik, B. ; Heskett, D. ; Aubin, K. ; Briere, M.A.
Author_Institution :
Dept. of Phys., Rhode Island Univ., Kingston, RI, USA
fYear :
1997
fDate :
20-23 Jul 1997
Firstpage :
159
Lastpage :
160
Abstract :
Electrical measurements of test structures of Al-0.5%Cu interconnects were performed as a function of temperature and current density. We have examined 1.8 μm wide×0.85 μm thick×250 μm long straight structures and found an activation energy, Ea=0.95 eV and a current exponent, n=2.63, after correction for Joule heating
Keywords :
aluminium alloys; copper alloys; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; 0.85 micron; 1.8 micron; 250 micron; Al alloy interconnects; Al-0.5%Cu interconnects; AlCu; activation energy; current density; electrical measurements; electromigration study; mean time to failure; temperature; test structures; Aluminum alloys; Current density; Current measurement; Density measurement; Electrical resistance measurement; Electromigration; Heating; Performance evaluation; Semiconductor device testing; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
ISSN :
0749-6877
Print_ISBN :
0-7803-3790-5
Type :
conf
DOI :
10.1109/UGIM.1997.616715
Filename :
616715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3522401
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